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| SHINDENGEN Darlington Transistor 2SD1788 (TP4L10) *} 4A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings nit U Storage TemperatureTstg -55*+150 *Z Junction TemperatureTj +150 *Z Collector to Base Voltage V 100 V CBO Collector to Emitter Voltage V 100 V CEO Emitter to Base Voltage V 7 V EBO Collector Current DCI *}4 A C Collector Current Peak I *}6 A CP Base Current DC I 0.3 A B Base Current Peak I 0.5 A BP Total Transistor Dissipation = 25*Z P Tc 25 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings nit U Collector Cutoff Current V = 100V I Max 0.1 A m CBO CB V = 100V I Max 0.1 CEO CE Emitter Cutoff Current I V = 7V Max 5 mA EBO EB DC Current Gain h = Min 1,500 CE C 1A FE V = 3V, I Max 30,000 Collector to Emitter V (sat) I = 1A Saturation Voltage Max 1.5 V CE C Base to Emitter Saturation Voltage V (sat)I = 2mA Max 2.0 V BE B Thermal Resistance AEjcJunction to case Max 5.0 *Z/W Transition Frequency fT V = 10V, 0.4A = TYP 20 Hz M CE C I Turn on Time ton Max 2 I = 1A C Storage Time ts I =B2 2mA = Max 12 Es B1 I R= 25 L Fall Time tf V = 4V Max 5 BB2 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SD1788 hFE - I C VCE = 3V 10000 1000 50C 100C Tc = 150C DC Current Gain hFE 100 25C 0C -25C -55C 0.1 1 6 10 0.01 Collector Current IC [A] 2SD1788 Saturation Voltage 3 1A 2A 3A 4A 5A 6A 2.5 6A 5A 4A 3A 1A 0.5A 2A 1.5 2 3 IC = 0.1A 0.5A 2.5 2 1.5 IC = 0.1A 1 Collector-Emitter Voltage VCE [V] 0.5 0.5 Tc = 25C 0 1 10 100 500 0 0.1 Base Current IB [mA] Base-Emitter Voltage VBE [V] 1 2SD1788 10 Switching Time - IC ts tf Switching Time tSW [s] ton 1 IB1 = 0.002IC IB2 = 0.002IC VBB2 = 4V VCC = 25V Tc = 25C 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector Current IC [A] 2SD1788 10 Switching Time - Tc ts tf Switching Time tSW [s] 1 ton IC = 1A IB1 = 2mA IB2 = 2mA VBB2 = 4V VCC = 25V 0.1 0 50 100 150 Case Temperature Tc [C] 2SD1788 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 103 102 104 105 106 107 Time t [s] 2SD1788 6 10ms DC Forward Bias SOA 1ms 150s 1 PT limit Collector Current IC [A] IS/B limit 0.1 Tc = 25C Single Pulse 0.01 1 10 100 Collector-Emitter Voltage VCE [V] 2SD1788 100 Collector Current Derating Collector Current Derating [%] 80 60 IS/B limit 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SD1788 25 Derating Curve Allowable Transistor Dissipation PT [W] Infinite heatsink 20 15 100mm x 150mm x 2mm Al 10 50 x 50 x 2 5 No heatsink 0 100 x 100 x 2 0 50 100 150 Ambient Temperature Ta [C] |
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